Spire Receives $998,514 For High Power Cryogenic Red Diode Lasers

Bedford, MA - Spire Corporation recently announced that it has received a two-year, $998,514 Phase II Small Business Innovative Research (SBIR) contract from the Missile Defense Agency (MDA) to develop highly reliable, high power cryogenic red diode lasers.

The technology used to fabricate diode lasers is similar to that used by Spire to manufacture concentrator solar cells for terrestrial solar concentrator systems. When light shines on a concentrator cell it produces electricity whereas when an electrical current is applied to a diode laser it produces light. Both types of devices are fabricated from gallium arsenide wafers produced by metal organic chemical vapor deposition (MOCVD).

Bandwidth Semiconductor, Spire's wholly owned subsidiary, will carry out technical tasks related to epitaxial material growth and device processing. Using a state-of-the-art foundry, Bandwidth Semiconductor manufactures solar cells, as well as custom light emitting diodes and diode lasers for a broad range of applications.

Mr. Roger Little, CEO and Chairman of Spire Corporation, said, "High power diode laser array technology is of interest to Spire because of its importance to this nation's defense. It also complements our solar cell product line. Bandwidth Semiconductor can efficiently produce these products.

SOURCE: Spire Corporation